Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency >50%
|Author(s):||Marina S. Leite, Robyn L. Woo, Jeremy N. Munday, William D. Hong, Shoghig Mesropian, Daniel C. Law, and Harry A. Atwater|
|Citation(s):||Appl. Phys. Lett. 102, 033901 (2013)|
Manuscript: PDF |
Endnote: Endnote |
Abstract: An approach for an all lattice-matched optimized design is presented with 5.807 Å together with a detailed analysis of its performance by means of full device modeling. The simulations show that a (1.93 eV)In0.37 0.63As/(1.39 eV)In0.38Ga0.62As0.57P0.43/(0.94 eV)In0.38Ga0.62As 3-junction can achieve efficiencies >51% under 100-suns (with Voc = 3.34 V). As a key proof of concept, an equivalent 3-junction lattice-matched to was fabricated and tested. The independently connected single junction were also tested in a spectrum splitting configuration, showing similar performance to a monolithic tandem device, with Voc = 1.8 V.